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1064nm APD Modules

1064nm APD Modules

Model: GD6212Y/ GD6213Y/ GD6219Y

Short Description:

It is enhanced Si avalanche photodiode module with pre-amplification circuit that enables weak current signal to be amplified and convert into voltage signal to achieve the conversion process of photon-photoelectric-signal amplification.


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Technical Parameter

Product Tags

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain

Applications  

  • Laser ranging
  • Laser communication
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range

(nm)

 

 

Breakdown voltage

(V)

Responsivity

M=100

λ=1064nm

(kV/W)

 

 

 

Rising time

(ns)

Bandwidth

(MHz)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Noise equivalent power

(pW/√Hz)

 

Concentricity(μm)

Replaced type in other countries

GD6212Y

 

 

TO-8

 

0.8

 

 

40~1100

350~500

150

8.8

40

2.2

0.15

≤50

C30950

GD6213Y

200

2

175

C30659-1060-R8BH

GD6219Y

3

280

7

50

2.4

0.27

C30659-1060-3A


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