1064nm Si PIN photodiode
Features
- Frontside illuminated structure
- Low dark current
- High response
- High reliability
Applications
- Optical fiber communication, sensing and ranging
- Optical detection from UV to NIR
- Fast optical-pulse detection
- Controlling systems for industry
Photoelectric parameter（@Ta=25℃）
|
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Spectral response range (nm) |
Peak response wavelength (nm) |
Responsivity(A/W) λ=1064nm
|
Rising time λ=1064nm VR=40V RL=50Ω(ns) |
Dark current VR=40V (nA) |
Junction capacitance VR=40V f=1MHz (pF) |
Breakdown voltage （V）
|
|
GT102Ф0.2 |
Coaxial type II,5501,TO-46 Plug type |
Ф0.2 |
4～1100 |
980
|
0.3 |
10 |
0.5 |
0.5 |
100 |
|
GT102Ф0.5 |
Ф0.5 |
10 |
1.0 |
0.8 |
|||||
|
GT102Ф1 |
Ф1.0 |
12 |
2.0 |
2.0 |
|||||
|
GT102Ф2 |
TO-5 |
Ф2.0 |
12 |
3.0 |
5.0 |
||||
|
GT102Ф4 |
TO-8 |
Ф4.0 |
20 |
5.0 |
12.0 |
||||
|
GD3310Y |
TO-8 |
Ф8.0 |
30 |
15 |
50 |
||||
|
GD3217Y |
TO-20 |
Ф10.0 |
50 |
20 |
70 |
