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800nm APD

800nm APD

Model: GD5210Y-1-2-TO46/ GD5210Y-1-5-TO46/ GD5210Y-1-2-LCC3/ GD5210Y-1-5-LCC3

Short Description:

It is Si avalanche photodiode that provides high sensitivity ranging from UV to NIR. The peak response wavelength is 800nm.


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Technical Parameter

Product Tags

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain
  • Low junction capacitance
  • Low noise

 Applications  

  • Laser ranging
  • Laser radar
  • Laser warning

Photoelectric parameter@Ta=22±3℃

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

 

 

Peak response wavelength

Responsivity

λ=800nm

φe=1μW

M=100

(A/W)

Response time

λ=800nm

RL=50Ω

(ns)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Total capacitance

M=100

f=1MHz

(pF)

 

Breakdown voltage

IR=10μA

(V)

Typ.

Max.

Min

Max

GD5210Y-1-2-TO46

TO-46

0.23

 

 

 

400~1100

 

 

 

 

800

 

55

 

 

 

 

0.3

0.05

0.2

0.5

1.5

80

160

GD5210Y-1-5-TO46

TO-46

0.50

0.10

0.4

3.0

GD5210Y-1-2-LCC3

LCC3

0.23

0.05

0.2

1.5

GD5210Y-1-5-LCC3

LCC3

0.50

0.10

0.4

3.0


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