800nm APD
Features
- Frontside illuminated flat chip
- High-speed response
- High APD gain
- Low junction capacitance
- Low noise
Applications
- Laser ranging
- Laser radar
- Laser warning
Photoelectric parameter(@Ta=22±3℃)
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Spectral response range(nm) |
Peak response wavelength |
Responsivity λ=800nm φe=1μW M=100 (A/W) |
Response time λ=800nm RL=50Ω (ns) |
Dark current M=100 (nA) |
Temperature Coefficient Ta=-40℃~85℃ (V/℃)
|
Total capacitance M=100 f=1MHz (pF)
|
Breakdown voltage IR=10μA (V) |
||
Typ. |
Max. |
Min |
Max |
|||||||||
GD5210Y-1-2-TO46 |
TO-46 |
0.23 |
400~1100
|
800 |
55
|
0.3 |
0.05 |
0.2 |
0.5 |
1.5 |
80 |
160 |
GD5210Y-1-5-TO46 |
TO-46 |
0.50 |
0.10 |
0.4 |
3.0 |
|||||||
GD5210Y-1-2-LCC3 |
LCC3 |
0.23 |
0.05 |
0.2 |
1.5 |
|||||||
GD5210Y-1-5-LCC3 |
LCC3 |
0.50 |
0.10 |
0.4 |
3.0 |