800nmAPD single tube series
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Photoelectric characteristics (＠Ta＝22±3℃) |
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Model |
GD5210Y-1-2-T046 |
GD5210Y-1-5-T046 |
GD5210Y-1-2-LCC3 |
GD5210Y-1-5 -LCC3 |
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|
Package form |
TO-46 |
TO-46 |
LCC3 |
LCC3 |
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Photosensitive surface diameter (mm) |
0.23 |
0.50 |
0.23 |
0.50 |
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Spectral response range (nm) |
400~1100 |
400~1100 |
400~1100 |
400~1100 |
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Peak response wavelength (nm) |
800 |
800 |
800 |
800 |
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λ=800nm Φ=1μW M=100(A/W) |
55 |
55 |
55 |
55 |
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Dark current |
Typical |
0.05 |
0.10 |
0.05 |
0.10 |
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M=100(nA) |
Maximum |
0.2 |
0.4 |
0.2 |
0.4 |
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Response time λ=800nm R1=50Ω(ns) |
0.3 |
0.3 |
0.3 |
0.3 |
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|
Working voltage temperature coefficient T=-40℃~85℃(V/℃) |
0.5 |
0.5 |
0.5 |
0.5 |
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Total capacitance M=100 f=1MHz(pF) |
1.5 |
3.0 |
1.5 |
3.0 |
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Breakdown voltage IR=10μA(V) |
Minimum |
80 |
80 |
80 |
80 |
|
Maximum |
160 |
160 |
160 |
160 |
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Front Plane Chip Structure
High speed response
High gain
Low junction capacitance
Low noise
Laser ranging
Lidar
Laser warning
