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850nm Si PIN modules

850nm Si PIN modules

Model: GD4213Y/ GD4251Y/ GD4251Y-A/ GD42121Y

Short Description:

It is 850nm Si PIN photodiode module with pre-amplification circuit that enables weak current signal to be amplified and convert to voltage signal to achieve the conversion process of photon-photoelectric-signal amplification.


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Technical Parameter

Product Tags

Features

  • High-speed response
  • High sensitivity

Applications  

  • Laser fuse

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Responsivity

Rising time

(ns)

Dynamic range

(dB)

 

Operating voltage

(V)

 

Noise voltage

(mV)

 

Notes

λ=850nm,φe=1μW

λ=850nm

GD4213Y

TO-8

2

110

12

20

±5±0.3

12

-

GD4251Y

2

130

12

20

±6±0.3

40

(Angle of incidence: 0°,  transmittance of 830nm~910nm ≥90%

GD4251Y-A

10×1.5

130

18

20

±6±0.3

40

GD42121Y

10×0.95

110

20

20

±5±0.1

25

Notes: The test load of GD4213Y is 50Ω,the rest others are 1MΩ

 

 


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