900nm Si PIN photodiode
Features
- Frontside illuminated structure
- Low dark current
- High response
- High reliability
Applications
- Optical fiber communication, sensing and ranging
- Optical detection from UV to NIR
- Fast optical-pulse detection
- Controlling systems for industry
Photoelectric parameter（@Ta=25℃）
|
Item # |
Package category |
Diameter of photosensitive surface(mm) |
Spectral response range (nm) |
Peak response wavelength (nm) |
Responsivity(A/W) λ=900nm
|
Rising time λ=900nm VR=15V RL=50Ω(ns) |
Dark current VR=15V (nA) |
Junction capacitance VR=15V f=1MHz (pF) |
Breakdown voltage （V）
|
|
GT101Ф0.2 |
Coaxial type II, 5501, TO-46, Plug type |
Ф0.2 |
4～1100 |
930
|
0.63 |
4 |
0.1 |
0.8 |
>200 |
|
GT101Ф0.5 |
Ф0.5 |
5 |
0.1 |
1.2 |
|||||
|
GT101Ф1 |
Ф1.0 |
5 |
0.1 |
2.0 |
|||||
|
GT101Ф2 |
TO-5 |
Ф2.0 |
7 |
0.5 |
6.0 |
||||
|
GT101Ф4 |
T0-8 |
Ф4.0 |
10 |
1.0 |
20.0 |
||||
|
GD3251Y |
TO-8 |
Ф6.0 |
20 |
10 |
30 |
||||
|
GT101Ф8 |
T0-8 |
Ф8.0 |
20 |
3.0 |
70.0 |
||||
|
GD3252Y |
T0-8 |
5.8×5.8 |
25 |
10 |
35 |
