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905nm APD

905nm APD

Model: GD5210Y-2-2-TO46/ GD5210Y-2-5-TO46/ GD5210Y-2-8-TO46/ GD5210Y-2-2-LCC3/ GD5210Y-2-5-LCC3/ GD5210Y-2-2-P/ GD5210Y-2-5-P/ Array

Short Description:

It is Si avalanche photodiode that provides high sensitivity ranging from UV to NIR. The peak response wavelength is 905nm.


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Technical Parameter

Product Tags

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain
  • Low junction capacitance
  • Low noise
  • Array size and photosensitive surface can be customized.

Applications  

  • Laser ranging
  • Laser radar
  • Laser warning

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

 

Peak response wavelength

(nm)

Responsivity

λ=905nm

φe=1μW

M=100

(A/W)

Response time

λ=905nm

RL=50Ω

(ns)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Total capacitance

M=100

f=1MHz

(pF)

 

Breakdown

voltage

IR=10μA

(V)

Typ.

Max.

Min

Max

GD5210Y-2-2-TO46

TO-46

0.23

 

 

 

 

 

 

400~1100

 

 

 

 

 

 

 

905

 

 

 

 

55

 

 

 

 

 

 

 

0.6

0.2

1.0

0.9

1.0

130

220

GD5210Y-2-5-TO46

TO-46

0.50

0.4

1.0

1.2

GD5210Y-2-8-TO46

TO-46

0.80

0.8

2.0

2.0

GD5210Y-2-2-LCC3

LCC3

0.23

0.2

1.0

1.0

GD5210Y-2-5-LCC3

LCC3

0.50

0.4

1.0

1.2

GD5210Y-2-2-P

Plastic package

0.23

0.2

1.0

1.0

GD5210Y-2-5-P

Plastic package

0.50

0.4

1.0

1.2

Array

PCB

Customized

According to photosensitive surface

According to photosensitive surface

 

According to photosensitive surface

160

200


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