Four-quadrant PIN single tube series

Model: GT111 / GT112 / GD3250Y / GD3249Y / GD3244Y / GD3245Y / GD32413Y / GD32414Y / GD32415Y

Short Description:

The device is four silicon PIN photodiodes with the same unit, working under the condition of reverse bias, the spectral response ranges from visible light to near-infrared, the peak response wavelength is 980nm, and the response at 1064nm can reach up to 0.5A/W.

get quote Download

Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric characteristics (＠Ta＝22±3℃)
Model	GT111	GT112	GD3250Y	GD3249Y	GD3244Y	GD3245Y	GD32413Y	GD32414Y	GD32415Y
Package form	TO-8	TO-8	TO-8	TO-20	TO-31-7	TO-31-7	MBCY026-P6	TO-8	MBCY026-W7W
Photosensitive surface size (mm)	Φ4	Φ6	Φ8	Φ10	Φ10	Φ16	Φ14	Φ5.3	Φ11.3
Spectral response range (nm)	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1150	400~1150
Peak response wavelength (nm)	980	980	980	980	980	980	980	980	980
Responsivity λ=1064nm(A/W)	0.3	0.3	0.3	0.3	0.4	0.4	0.4	0.5	0.5
Dark current (nA)	5(V_R=40V)	7(V_R=40V)	10(V_R=40V)	15(V_R=40V)	20(V_R=135V)	50(V_R=135V)	40(V_R=135V)	4.8(V_R=140V)	≤20(V_R=180V)
Rise time In = 1064nm RL = 50Ω (ns)	15(V_R=40V)	20(V_R=40V)	25(V_R=40V)	30(V_R=40V)	20(V_R=135V)	30(V_R=135V)	25(V_R=135V)	15(V_R=140V)	20(V_R=180V)
Junction capacitance f=1MHz(pF)	5(V_R=10V)	7(V_R=10V)	10(V_R=10V)	15(V_R=10V)	10(V_R=135V)	10(V_R=135V)	16(V_R=135V)	4.2(V_R=140V)	10(V_R=180V)
Breakdown voltage (V)	100	100	100	100	300	300	300	≥300	≥250

Low dark current

High responsiveness

Good quadrant consistency

Small blind spot

Laser aiming, guidance tracking and exploration device

Laser micro-positioning, displacement monitoring and other precision measurement systems