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Four-quadrant Si PIN

Four-quadrant Si PIN

Model: GT111/ GT112/ GD3250Y/ GD3249Y/ GD3244Y/ GD3245Y/ GD32413Y/ GD32414Y/ GD32415Y

Short Description:

It consists of four same units of Si PIN photodiode that operates under reverse and provides high sensitivity ranging from UV to NIR. The peak response wavelength is 980nm. Responsivity: 0.5 A/W at 1064 nm.


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Technical Parameter

Product Tags

Features

  • Low dark current
  • High response
  • Good quadrant consistency
  • Small blind area 

Applications  

  • Laser guidance, targeting, and tracking
  • For exploration device
  • Laser micro-positioning, displacement monitoring and precise measurement systems

Photoelectric parameter(@Ta=25℃)

Item #

 

Package category

Diameter

of photosensitive surface(mm)

Spectral response range

(nm)

peak response wavelength

Responsivity

λ=1064nm

(kV/W)

 

Dark current

(nA)

 

Rising time

λ=1064nm

RL=50Ω(ns)

 

Junction capacitance

f=1MHz

(pF)

Breakdown  voltage

(V)

 

GT111

TO-8

Ф4

 

 

400~1100

 

 

 

 

980

0.3

5(VR=40V)

15(VR=40V)

5(VR=10V)

100

GT112

Ф6

7(VR=40V)

20(VR=40V)

7(VR=10V)

GD3250Y

Ф8

10(VR=40V)

25(VR=40V)

10(VR=10V)

GD3249Y

TO-20

Ф10

15(VR=40V)

30(VR=40V)

15(VR=10V)

GD3244Y

TO-31-7

Ф10

0.4

20(VR=135V)

20(VR=135V)

10(VR=135V)

300

GD3245Y

Ф16

50(VR=135V)

30(VR=135V)

20(VR=135V)

GD32413Y

MBCY026-P6

Ф14

40(VR=135V)

25(VR=135V)

16(VR=135V)

GD32414Y

TO-8

Ф5.3

400~1150

0.5

4.8(VR=140V)

15(VR=140V)

4.2(VR=140V)

≥300

GD32415Y

MBCY026-W7W

Ф11.3

≤20(VR=180V)

20(VR=180V)

10(VR=180V)


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