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InGaAS-APD module series

InGaAS-APD module series

Model: GD6510Y / GD6511Y / GD6512Y

Short Description:

The device is an InGaAs avalanche photodiode module with a built-in preamplifier circuit, which can convert the weak. After the current signal is amplified, it is converted into a voltage signal output to realize “optical-electrical-signal amplification” conversion process.


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Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric characteristics (@Ta=22±3)

Model

GD6510Y

GD6511Y

GD6512Y

Package form

TO-8

TO-8

TO-8

Photosensitive surface diameter (mm)

0.2

0.5

0.08

Spectral response range (nm)

1000~1700

1000~1700

1000~1700

Breakdown voltage (V)

30~70

30~70

30~70

Responsivity M=10 l=1550nm(kV/W)

340

340

340

Rise time (ns)

5

10

2.3

Bandwidth (MHz)

70

35

150

Equivalent noise power (pW/√Hz)

0.15

0.21

0.11

Working voltage temperature coefficient T=-40℃~85℃(V/℃)

0.12

0.12

0.12

Concentricity (μm)

≤50

≤50

≤50

Alternative models of the same performance worldwide

C3059-1550-R2A

/

C3059-1550-R08B

Front Plane Chip Structure 

Quick response

High detector sensitivity

Laser ranging

Lidar

Laser warning


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  • Front Plane Chip Structure 

    Quick response

    High detector sensitivity

    Laser ranging

    Lidar

    Laser warning