InGaAS-APD module series
Photoelectric characteristics (@Ta=22±3℃) |
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Model |
GD6510Y |
GD6511Y |
GD6512Y |
Package form |
TO-8 |
TO-8 |
TO-8 |
Photosensitive surface diameter (mm) |
0.2 |
0.5 |
0.08 |
Spectral response range (nm) |
1000~1700 |
1000~1700 |
1000~1700 |
Breakdown voltage (V) |
30~70 |
30~70 |
30~70 |
Responsivity M=10 l=1550nm(kV/W) |
340 |
340 |
340 |
Rise time (ns) |
5 |
10 |
2.3 |
Bandwidth (MHz) |
70 |
35 |
150 |
Equivalent noise power (pW/√Hz) |
0.15 |
0.21 |
0.11 |
Working voltage temperature coefficient T=-40℃~85℃(V/℃) |
0.12 |
0.12 |
0.12 |
Concentricity (μm) |
≤50 |
≤50 |
≤50 |
Alternative models of the same performance worldwide |
C3059-1550-R2A |
/ |
C3059-1550-R08B |
Front Plane Chip Structure
Quick response
High detector sensitivity
Laser ranging
Lidar
Laser warning
Front Plane Chip Structure
Quick response
High detector sensitivity
Laser ranging
Lidar
Laser warning