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InGaAs APD Modules

InGaAs APD Modules

Model: GD6510Y/ GD6511Y/ GD6512Y

Short Description:

It is indium gallium arsenide avalanche photodiode module with pre-amplification circuit that enables weak current signal to be amplified and convert into voltage signal to achieve the conversion process of photon-photoelectric-signal amplification.


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Technical Parameter

Product Tags

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High sensitivity of detector

Applications  

  • Laser ranging
  • Laser communication
  • Laser warning    

Photoelectric parameter@Ta=22±3℃

Item #

 

 

Package category

 

 

Diameter of photosensitive surface(mm)

 

 

Spectral response range

(nm)

 

 

Breakdown voltage

(V)

Responsivity

M=10

λ=1550nm

(kV/W)

 

 

 

 

Rising time

(ns)

Bandwidth

(MHz)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Noise equivalent power(pW/√Hz)

 

Concentricity(μm)

Replaced type in other countries

GD6510Y

 

 

TO-8

 

0.2

 

 

1000~1700

      30~70

340

5

70

0.12

0.15

≤50

C3059-1550-R2A

GD6511Y

0.5

10

35

0.21

GD6512Y

0.08

2.3

150

0.11

C3059-1550-R08B


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