800nm APD single tube series

Model: GD5210Y-1-2-T046 / GD5210Y-1-5-T046 /GD5210Y-1-2-LCC3 /GD5210Y-1-5-LCC3

The device is a silicon avalanche photodiode with a spectral response range from visible to near-infrared and a peak response wavelength of 800 nm.

FEATURES APPLICATION

Ortho-illuminated planar chip structure Laser Ranging

High speed response LIDAR

High gain Laser Warning

Low junction capacitance

Low noise

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Technical Parameter

Model		GD5210Y-1-2-T046	GD5210Y-1-5-T046	GD5210Y-1-2-LCC3	GD5210Y-1-5-LCC3
Package type		TO-46	TO-46	LCC3	LCC3
Diameter of photosensitive surface(mm)		0.23	0.50	0.23	0.50
Spectral response range(nm)		400~1100	400~1100	400~1100	400~1100
Peak response wavelength(nm)		800	800	800	800
Responsiveness λ=800nm Φ=1μW M=100(A/W)		55	55	55	55
Dark current M=100(nA)	Typical	0.05	0.10	0.05	0.10
Dark current M=100(nA)	Maximum	0.2	0.4	0.2	0.4
Response time λ=800nm R1=50Ω(ns)		0.3	0.3	0.3	0.3
Operating voltage temperature coefficient T=-40℃~85℃(V/℃)		0.5	0.5	0.5	0.5
Total Capacitance M=100 f=1MHz(pF)		1.5	3.0	1.5	3.0
Breakdown voltage IR=10μA(V)	Min	80	80	80	80
Breakdown voltage IR=10μA(V)	Max	160	160	160	160