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Vertical Stack Diode Lasers 300-2800

Vertical Stack Diode Lasers 300-2800

Type: LY-808-BT300/ LY-808-BT1200/ LY-808-BT2800

Short Description:

This is a polygonal semiconductor laser which can be applied for beautifying hair removal and laser pumping as a very important part of the whole system. Bonded by Au8Sn with micro channel water-cooled structuring, It has advantages of compact structuring, smaller dimensions, long pulse width, high duty ratio, stable performance and long lifetime etc.


Product Detail

Product Tags

Features:

● Easy to operate

● High peak power

● High stability

● Long Lifetime

● Wide working temperature range

● High environmental adaptability

Application:

● Lighting

● Detecting

● Scientific Research

● Solid-state laser pumping

Vertical Stack Diode Lasers/ Type: LY-808-BT300

LY-808-BT300

Parameters

Optical parameters
Peak power, W/bar ≥300
Center wavelength, nm 808
Wavelength Tolerance, nm ±15
Fast axis divergence angle (FWHM), ° 36
Slow axis divergence angle (FWHM), ° 10
Wavelength /temperature  nm/℃ <0.28
Working requirements
Pulse width, ms 30
Duty ratio,% 30
Working current, A 50
Electrical parameters
Electro-optical conversion efficiency,% ≥50
Working voltage, V/bar ≤2
Other parameters
Number of chips 6
Bar interval, mm 1.8
Polarization state TE
Operating mode QCW
Working temperature, ℃ 22~28
Lumen , L/min 2~4
Sizes, mm 39×40×37

Dimensions (mm)

sdvd

Vertical Stack Diode Lasers/ Type: LY-808-BT1200

LY-808-BT300

 Parameters

Optical parameters

Peak power, W/bar

≥1200

Centre wavelength, nm

760~940

Wavelength Tolerance, nm

±2

Spectral width (FWHM),nm

≤4

Fast axis divergence angle (FWHM),°

36

Slow axis divergence angle (FWHM),°

10

Wavelength /temperature  nm/℃

<0.28

Working requirements

Pulse width, ms

200

Duty ratio,%

0.5

Working current, A

200

Electrical parameters

Electro-optical conversion efficiency,%

≥50

Max Working Current,A

220

Threshold current ,A

≤40

Working Voltage,V/bar

≤2

Other parameters

Number of chips

6

Polarization state

TE

Operating mode

QCW

operating temperature ,℃

-45~+65

Storage temperature ,℃

-55~+85

dimension, mm

25×13×16

Dimensions (mm)

cvb

Vertical Stack Diode Lasers/ Type: LY-808-BT2800

LY-808-BT2800

Parameters

Optical parameters

Peak power, W/bar

≥2800

Centre wavelength, nm

760~940

Wavelength Tolerance, nm

±2

Spectral width (FWHM),nm

≤5

Fast axis divergence angle (FWHM),°

2~4

Slow axis divergence angle (FWHM),°

10

Wavelength /temperature  nm/℃

<0.28

Working requirements

Pulse width, ms

200

Duty ratio,%

0.4

Working current, A

200

Electrical parameters

Electro-optical conversion efficiency,%

≥50

Max Working Current,A

250

Threshold current ,A

≤40

Working Voltage,V/bar

≤2

Other parameters

Number of chips

14

Polarization state

TE

Operating mode

QCW

Working temperature ,℃

-55~+70

Storing temperature ,℃

-60~+85

Sizes, mm

38×23×16

Dimensions (mm)

bff


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