Vertical Stack Diode Lasers 4000-9600

Type: LY-808-BT4000/ LY-808-BT4800/ LY-808-BT9600

Short Description:

This is a polygonal semiconductor laser which can be applied for laser pumping, industrial processing, ranging, etc. as a very important part of the whole system. It has advantages of compact structuring, smaller dimensions and weight, high power density, high electro-optical efficiency, stable performance and long lifetime etc.

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Introduction

Typically, all diode bars within one stack are electrically connected in series. As a single diode bar would require the same high current, the electrical cables do not have to be stronger for a stack; only the voltage will be higher, but still quite moderate. The higher voltage allows the laser diode driver to reach a higher power conversion efficiency.

Our vertical stack diode laser are available to deliver across many use cases. We cover fiber or free space delivery, low- or high-output power, air or water cooling, and rack-mounted or free-standing packaging.

Vertical Stack Diode Lasers/ Type: LY-808-BT4000

Parameters

Optical parameters
Peak power, W/bar	≥4000
Centre wavelength, nm	760~940
Wavelength Tolerance, nm	±2
Spectral width （FWHM），nm	≤4
Fast axis divergence angle （FWHM），°	36
Slow axis divergence angle （FWHM），°	10
Wavelength /temperature nm/℃	＜0.28
Working requirements
Pulse width, ms	200
Duty ratio,%	0.5
Working current, A	200
Electrical parameters
Electro-optical conversion efficiency,%	≥50
Max Working Current，A	250
Threshold current ，A	≤40
Working Voltage，V/bar	≤2
Other parameters
Number of chips	20
Polarization state	TE
Operating mode	QCW
Working temperature ，℃	-45~+65
Storing temperature ，℃	-55~+85
Sizes, mm	24.55×11×6.16

Dimensions（mm）

Vertical Stack Diode Lasers/ Type: LY-808-BT4800

Parameters

Optical parameters
Peak power, W/bar	≥4800
Centre wavelength, nm	760~940
Wavelength Tolerance, nm	±3
Spectral width （FWHM），nm	≤5
Fast axis divergence angle （FWHM），°	36
Slow axis divergence angle （FWHM），°	10
Wavelength /temperature nm/℃	＜0.28
Working requirements
Pulse width, ms	200
Duty ratio,%	0.5
Working current, A	200
Electrical parameters
Electro-optical conversion efficiency,%	≥50
Max Working Current，A	250
Threshold current ，A	≤40
Working Voltage，V/bar	≤2
Other parameters
Number of chips	24
Polarization state	TE
Operating mode	QCW
Working temperature ，℃	-45~+65
Storing temperature ，℃	-55~+85
Sizes, mm	62×43.4×19.6

Dimensions (mm)

Vertical Stack Diode Lasers/ Type: LY-808-BT9600

Parameters

Optical parameters
Peak power, W/bar	≥9600
Centre wavelength, nm	760~940
Wavelength Tolerance, nm	±2
Spectral width （FWHM），nm	≤5
Fast axis divergence angle （FWHM），°	36
Slow axis divergence angle （FWHM），°	10
Wavelength /temperature nm/℃	＜0.28
Working requirements
Pulse width, ms	200
Duty ratio,%	0.5
Working current, A	200
Electrical parameters
Electro-optical conversion efficiency,%	≥50
Max Working Current，A	220
Threshold current ，A	≤40
Working Voltage，V/bar	≤2
Other parameters
Number of chips	48
Polarization state	TE
Operating mode	QCW
Working temperature ，℃	-50~+70
Storing temperature ，℃	-60~+80
Sizes, mm	72×34×11.5