905nm APD single tube series

Model: GD5210Y-1-2-T046 / GD5210Y-1-5-T046 /GD5210Y-1-2-LCC3 /GD5210Y-1-5-LCC3

The device is a silicon avalanche photodiode with a spectral response range from visible to near infrared. Peak response wavelength 905nm

FEATURES APPLICATION

Ortho-illuminated planar chip structure Laser Ranging

High speed response LIDAR

High gain Laser Warning

Low junction capacitance

Low noise

Customizable array size and photosensitive surface

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Technical Parameter

Model		GD5210Y-2-2-T046	GD5210Y-2-5-T046	GD5210Y-2-8-T046	GD5210Y-2-2-LCC3	GD5210Y-2-5-LCC3	GD5210Y-2-2-P	GD5210Y-2-5-P	Array
Package type		TO-46	TO-46	TO-46	LCC3	LCC3	Plastidip	Plastidip	PCB
Diameter of photosensitive surface(mm)		0.23	0.50	0.80	0.23	0.50	0.23	0.50	Customized
Spectral response range(nm)		400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100	400~1100
Peak response wavelength(nm)		905	905	905	905	905	905	905	905
Responsiveness λ=905nm Φ=1μW M=100 (A/W)		55	55	55	55	55	55	55	55
Dark current M=100(nA)	Typical	0.2	0.4	0.8	0.2	0.4	0.2	0.4	According to the photosensitive surface
Dark current M=100(nA)	Max	1.0	1.0	2.0	1.0	1.0	1.0	1.0
Response timeλ=905nm R1=50Ω(ns)		0.6	0.6	0.6	0.6	0.6	0.6	0.6
Operating voltage temperature coefficient T=-40℃~85℃(V/℃)		0.9	0.9	0.9	0.9	0.9	0.9	0.9	0.9
Total Capacitance M=100 f=1MHz(pF)		1.0	1.2	2.0	1.0	1.2	1.0	1.2	According to the photosensitive surface
Breakdown voltage IR=10μA(V)	Min	130	130	130	130	130	130	130	160
Breakdown voltage IR=10μA(V)	Max	220	220	220	220	220	220	220	200