1064nmAPD single tube series

Model: GD5210Y-3-500 / GD5210Y-3-800 / GD5211Y

Short Description:

The device is a silicon avalanche photodiode with a spectral response range from visible to near-infrared, with a peak response wavelength of 980 nm and a response of up to 36 A/W at 1064 nm.

FEATURES APPLICATION

Ortho-illuminated planar chip structure Laser distance measurement

High response frequency LIDAR

High gain Laser Warning

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Technical Parameter

FEATURES

APPLICATION

Product Tags

OPTICAL CHARACTERISTICS （＠Ta＝22±3℃）

Model			GD5210Y-3-500	GD5210Y-3-800	GD5211Y
Package type			TO-46	TO-46	TO-52
Diameter of photosensitive surface(mm)			0.5	0.8	0.8
Spectral response range(nm)			400~1100	400~1100	400~1100
Peak response wavelength(nm)			980	980	980
Responsiveness	λ=905nm Φ=1μW M=100		58	58	58
Responsiveness	λ=1064nm Φ=1μW M=100		36	36	36
Dark current M=100(nA)		Typical	2	4	10
Dark current M=100(nA)		Maximum	20	20	20
Response time λ=800nm R1=50Ω(ns)			2	3	3.5
Operating voltage temperature coefficient T=-40℃~85℃(V/℃)			2.2	2.2	2.2
Total Capacitance M=100 f=1MHz(pF)			1.0	1.5	3.5
Breakdown voltage IR=10μA(V)		Min	220	220	350
Breakdown voltage IR=10μA(V)		Max	580	580	500

Front Plane Chip Structure

High response frequency

High gain

Laser ranging

Lidar

Laser warning

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