dfbf

850nmPIN Module series

850nmPIN Module series

Model: GD4213Y / GD4251Y / GD4251Y-A / GD42121Y

Short Description:

The device is a silicon PIN photodiode module with a built-in preamplifier circuit, which can amplify the weak current signal and convert it into a voltage signal output, realizing the conversion process of “optical-electrical-signal amplification”.


  • f614effe
  • 6dac49b1
  • 46bbb79b
  • 374a78c3

Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric characteristics (@Ta=22±3)

Model

GD4213Y

GD4251Y

GD4251Y-A

GD42121Y

Package form

TO-8

TO-8

TO-8

TO-8

Photosensitive surface size (mm)

2

2

10×1.5

10×0.95

Working voltage (V)

±5±0.3

±6±0.3

±6±0.3

±5±0.1

Noise voltage (mV)

12

40

40

25

Responsiveness (M/AY)

λ=850nm,φ=1μW

110

130

130

110

Rise time (ns)

12

12

18

20

Dynamic range (dB) λ=850nm

20

20

20

20

Remark

The light window is plated with a carrier tape filter film (0 degree incidence, 830nm~910nm transmittance ≥ 90%), the test load of GD4213Y is 50Ω, and the test load of other products is 1MΩ.

Quick response 

High sensitivity

Laser fuze


  • Previous:
  • Next:

  • Quick response 

    High sensitivity

    Laser fuze