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355nm APD

355nm APD

Model: GD5210Y-0-1-TO5/ GD5210Y-0-2-TO5

Short Description:

It is Si avalanche photodiode with large photosensitive surface and enhanced UV. It provides high sensitivity ranging from UV to NIR.


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Technical Parameter

Product Tags

Features

  • Frontside illuminated flat chip
  • High-speed response
  • High APD gain

Applications  

  • Medical
  • Biology 

Photoelectric parameter(@Ta=22±3℃)

Item #

Package category

Diameter of photosensitive surface(mm)

Spectral response range(nm)

Responsivity

λ=355nm

φe=1μW

M=100

 (A/W)

Dark current

M=100

(nA)

Temperature Coefficient

Ta=-40℃~85℃

(V/℃)

 

Total capacitance

M=100

f=1MHz

(pF)

 

Breakdown 

voltage

IR=10μA

(V)

VR=10V

VR=8V

Typ.

Max.

Min.

Max.

GD5210Y-0-1-TO5

TO-5

1.8

300~1100

0.22

6.75

3

10

0.4

20

80

200

GD5210Y-0-2-TO5

TO-5

3.0

15

50

50


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