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905nmAPD single tube series

905nmAPD single tube series

Model: GD5210Y-2-2-T046 / GD5210Y-2-5-T046 / GD5210Y-2-8-T046 / GD5210Y-2-2-LCC3 / GD5210Y-2-5-LCC3 / GD5210Y-2-2-P / GD5210Y-2-5-P

Short Description:

The device is a silicon avalanche photodiode, the spectral response ranges from visible light to near-infrared, and the peak response wavelength is 905nm.


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Technical Parameter

FEATURES

APPLICATION

Product Tags

Photoelectric characteristics (@Ta=22±3)

 Model

GD5210Y-2-2-T046

GD5210Y-2-5-T046

GD5210Y-2-8-T046

GD5210Y-2-2-LCC3

GD5210Y-2-5-LCC3

GD5210Y-2-2-P

GD5210Y-2-5-P

 Array

Package form

TO-46

TO-46

TO-46

LCC3

LCC3

plastic packaging

plastic packaging

PCB

Photosensitive surface diameter (mm)

0.23

0.50

0.80

0.23

0.50

0.23

0.50

customized

Spectral response range (nm)

400~1100

400~1100

400~1100

400~1100

400~1100

400~1100

400~1100

400~1100

Peak response wavelength (nm)

905

905

905

905

905

905

905

905

Responsiveness

λ=905nm  Φ=1μW  M=100 (A/W)

55

55

55

55

55

55

55

55

Dark current M=100(nA)

Typical

0.2

0.4

0.8

0.2

0.4

0.2

0.4

According to photosensitivity

Maximum

1.0

1.0

2.0

1.0

1.0

1.0

1.0

One side

Response time

λ=905nm  R1=50Ω(ns)

0.6

0.6

0.6

0.6

0.6

0.6

0.6

According to photosensitive surface

Working voltage temperature coefficient T=-40℃~85℃(V/℃)

0.9

0.9

0.9

0.9

0.9

0.9

0.9

0.9

Total capacitance

M=100  f=1MHz(pF)

1.0

1.2

2.0

1.0

1.2

1.0

1.2

 

According to photosensitive surface

breakdown voltage

IR=10μA(V)

 Minimum

130

130

130

130

130

130

130

160

Maximum

220

220

220

220

220

220

220

200


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  • Front Plane Chip Structure 

    High speed response

    High gain

    Low junction capacitance

    Low noise

    Array size and photosensitive surface can be customized

    Laser ranging

    Lidar

    Laser warning